BDX66B Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BDX66B Datasheet PDF : 2 Pages
| |||
\/£lV (J.£11£U <^>£,mi-(-on.auetoi J loaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDX66/A/B/C
DESCRIPTION
• Collector Current -lc= -16A
• High DC Current Gain-hFE= 1000(Min)@ IC=-10A
• Complement to Type BDX67/A/B/C
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25r>
SYMBOL
PARAMETER
VALUE
UNIT
BDX66
-80
VCBO
Collector-Base
Voltage
BDX66A
-100
V
BDX66B
-120
BDX66C
-140
BDX66
-60
VCEO
Collector-Emitter
Voltage
BDX66A
-80
V
BDX66B
-100
BDX66C
-120
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
-0.25
A
150
W
200
°C
Tstg
Storage Temperature Range
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 "CM/
PIN
1.BASE
JL 2. EMITTER
3. COLLECT OR (CASE)
2 TO-3 package
.
A.
I
I,
!PL
V-
L—
-^ A± f
GB
~f I
nun
DIM MM MAX
A
3900
B 2S.SJ 26 &7
c
7.80 8.30
D
0.90
1.10
E
MO 1.60
(j
1092
H
546
K 11.40 13.50
L
1675 1705
N 1940 19.62
g
400 420
u ».oo 3020
v
4.30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I knvever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 