NESG2031M16-T3-A Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

NESG2031M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 2 V,

25 f = 3 GHz

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 1 GHz

25

MSG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 3 GHz

25

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

NESG2031M16

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 2 V,

f = 5 GHz

25

20

MSG

MAG

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

25 f = 2 GHz

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 5 GHz

25

20

MSG

MAG

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

Data Sheet PU10394EJ03V0DS

7

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