CHT5551PT Просмотр технического описания (PDF) - CHENMKO CO., LTD.

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Компоненты Описание

производитель

CHT5551PT

SURFACE MOUNT NPN SILICON Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHT5551PT)

Typical Pulsed Current Gain

vs Collector Current

500

V CE = 5V

300

200 Tj=125 °C

Tj=25 °C

100

Tj=-55 °C

30

20

10

5

1

10

100

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Base Current

1.0

Ic=10mA

0.8

0.6

0.4

0.2

0

0.1

0.2

0.3

0.5

1.0

I B - BASE CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

1.0

Ic/IB=10

0.8

0.6

0.4

0.2

0

0.1

1.0

10

100

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

1.0

Ic/IB=10

0.8

0.6

0.4

0.2

0

0.1

1.0

10

100

I C - COLLECTOR CURRENT (mA)

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