2SC5369 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SC5369 Datasheet PDF : 12 Pages
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2SC5369
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
| S21e | 2
NF
TEST CONDITIONS
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 10 mANote 1
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
MIN.
80
12
TYP.
14
0.15
14
1.3
MAX.
0.1
0.1
160
0.25
2.3
UNIT
µA
µA
GHz
pF
dB
dB
STANDARD SPECIFICATION
Marking
hFE
FB
T95
80 to 160
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed
2. Measure by using 3-terminal bridge with emitter pin connected to guard terminal of bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA CHARACTERISTICS
200
IC - VBE CHARACTERISTICS
50
VCE = 3 V
40
30
100
20
10
0
50
100
150
Ambient Temperature TA (°C)
IC - VCE CHARACTERISTICS
30
Ie = 200 µA
180 µA
20
160 µA
140 µA
120 µA
100 µA
10
80 µA
60 µA
40 µA
20 µA
0
2
4
6
8
Collector to Emitter Voltage VCE (V)
0
0.5
1.0
DC Base Voltage VBE (V)
hFE - IC CHARACTERISTICS
500
VCE = 3 V
200
100
50
20
10 1
2
5
10
20
50
Collector Current IC (mA)
2
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