STB80NF10(2007) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB80NF10
(Rev.:2007)

N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STP80NF10 - STB80NF10

Electrical characteristics

Table 5. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 50V, ID= 40A,

RG = 4.7Ω, VGS=10V

(see Figure 14)

Min. Typ. Max. Unit

26

ns

80

ns

116

ns

60

ns

Table 6. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM(1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 80A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A, VDD = 50V

di/dt = 100A/µs,Tj=150°C

1. Pulse width limited by safe operating area

2. Pulsed:pulse duration=300µs, duty cycle 1.5%

80 A

320 A

1.3 V

106

ns

450

nC

8.5

A

5/14

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