STY100NS20FD(2002) Просмотр технического описания (PDF) - STMicroelectronics

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STY100NS20FD
(Rev.:2002)

N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET

STMicroelectronics 

STY100NS20FD

N-CHANNEL 200V - 0.022Ω - 100A Max247

MESH OVERLAY™ Power MOSFET

TYPE

VDSS

RDS(on)

ID

STY100NS20FD

200V < 0.024Ω 100 A

n TYPICAL RDS(on) = 0.022Ω

n EXTREMELY HIGH dv/dt CAPABILITY

n 100% AVALANCHE TESTED

n GATE CHARGE MINIMIZED

n ± 20V GATE TO SOURCE VOLTAGE RATING

n LOW INTRINSIC CAPACITANCE

n FAST BODY-DRAIN DIODE:LOW trr, Qrr

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, gives the lowest RDS(ON) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING

n SWITCH MODE POWER SUPPLY (SMPS)

n DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

3

2

1

Max247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (l) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

January 2002

Value

200

200

±20

100

63

400

450

3.6

25

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

°C

(1)ISD ≤100A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/8

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