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STD30NE06 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STD30NE06
N - CHANNEL 60V - 0.025 Ω - 30A - DPAK STripFET™ " POWER MOSFET
STMicroelectronics
STD30NE06 Datasheet PDF : 5 Pages
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STD30NE06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Parameter
Turn-on Time
Rise Time
Test Conditions
V
DD
= 30 V
R
G
=4.7
Ω
I
D
= 22 A
V
GS
= 10 V
Q
g
Total Gate Charge
V
DD
=48V I
D
= 45 A V
GS
= 10 V
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Min.
Typ.
27
100
Max.
50
135
Unit
ns
ns
60
80
nC
18
nC
17
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 48 V I
D
= 45 A
R
G
=4.7
Ω
V
GS
= 10 V
Min.
Typ.
20
45
72
Max.
27
60
100
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage
I
SD
= 45 A V
GS
= 0
t
rr
Reverse Recovery
Time
Q
rr
Reverse Recovery
Charge
I
SD
= 45 A
V
DD
= 30 V
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ.
Max.
30
120
Unit
A
A
1.5
V
70
ns
210
µ
C
6
A
3/5
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