STP45NF06 Просмотр технического описания (PDF) - STMicroelectronics
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STP45NF06 Datasheet PDF : 11 Pages
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STP45NF06 - STB45NF06
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 38A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering Purpose
Value
60
60
±20
38
26
152
80
0.53
7
–65 to 175
175
1.87
62.5
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
38
135
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
V
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
nA
Table 7: On
Symbol
Parameter
Test Conditions
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On VGS = 10 V, ID = 19 A
Resistance
Min.
2
Typ.
Max.
Unit
3
4
V
0.022 0.028
Ω
2/11
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