STP45NF06 Просмотр технического описания (PDF) - STMicroelectronics
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STP45NF06 Datasheet PDF : 11 Pages
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STP45NF06 - STB45NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 8: Dynamic
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =19 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25V, f= 1 MHz, VGS= 0
Table 9: Switching On
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30V, ID = 19A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 48V, ID = 38A,
VGS = 10V
Table 10: Switching Off
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30V, ID = 19A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48V, ID =38A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Table 11: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 38A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 38A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Min.
Min.
Min.
Typ. Max. Unit
24
S
1730
pF
215
pF
63
pF
Typ. Max. Unit
20
ns
100
ns
43
58
nC
9
nC
15
nC
Typ. Max. Unit
50
ns
20
ns
45
ns
42
ns
60
ns
Typ. Max. Unit
38
A
152
A
1.5
V
95
ns
260
nC
5.5
A
3/11
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