W12NK80Z(2002) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

W12NK80Z
(Rev.:2002)

N-CHANNEL 800V - 0.65Ω - 10.5A TO-247 Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STW12NK80Z

N-CHANNEL 800V - 0.65Ω - 10.5A TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE

VDSS RDS(on)

ID

Pw

STW12NK80Z

800 V < 0.75 Ω 10.5 A 190 W

s TYPICAL RDS(on) = 0.65 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s GATE CHARGE MINIMIZED

s VERY LOW INTRINSIC CAPACITANCES

s VERY GOOD MANUFACTURING

REPEATIBILITY

3

2

1

TO-247

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s IDEAL FOR OFF-LINE POWER SUPPLIES

ORDERING INFORMATION

SALES TYPE

STW12NK80Z

MARKING

W12NK80Z

PACKAGE

TO-247

PACKAGING

TUBE

October 2002

1/9

Share Link: