ISL9N304AS3ST Просмотр технического описания (PDF) - Fairchild Semiconductor
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ISL9N304AS3ST Datasheet PDF : 11 Pages
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Final Draft
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
Zero Gate Voltage Drain Current
VDS = 25V
VGS = 0V
-
TC = 150o
-
Gate to Source Leakage Current
VGS = ±20V
-
-
-
V
-
1
µA
-
250
-
±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 75A, VGS = 10V
ID = 74A, VGS = 4.5V
1
-
3
V
- 0.0036 0.0045
Ω
- 0.0060 0.0075
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = 15V, VGS = 0V,
f = 1MHz
-
-
VGS = 0V to 10V
VGS = 0V to 5V VDD = 15V
-
VGS = 0V to 1V ID = 74A
-
Ig = 1.0mA
-
-
4075
-
pF
830
-
pF
380
-
pF
70
105
nC
38
57
nC
3.9
5.8
nC
11
-
nC
13
-
nC
Switching Characteristics (VGS = 4.5V)
tON
Turn-On Time
td(ON)
tr
Turn-On Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 20A
VGS = 4.5V, RGS = 2.4Ω
-
-
137
ns
-
14
-
ns
-
77
-
ns
-
33
-
ns
-
20
-
ns
-
-
79
ns
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 20A
VGS = 10V, RGS = 2.4Ω
-
-
113
ns
-
9
-
ns
-
67
-
ns
-
51
-
ns
-
19
-
ns
-
-
104
ns
Unclamped Inductive Switching
tAV
Avalanche Time
ID = 3.8A, L = 3.0mH
255
-
-
µs
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 74A
-
ISD = 35A
-
ISD = 74A, dISD/dt = 100A/µs
-
ISD = 74A, dISD/dt = 100A/µs
-
-
1.25
V
-
1.0
V
-
27
ns
-
16
nC
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
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