MJL16218
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (2)
Collector Cutoff Current (VCE = 1500 V, VBE = 0 V)
(VCE = 1200 V, VBE = 0 V)
ICES
—
—
Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0)
IEBO
—
Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0)
V(BR)EBO
8.0
Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) VCEO(sus)
650
ON CHARACTERISTICS (2)
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 2.0 Adc)
VCE(sat)
—
(IC = 3.0 Adc, IB = 0.6 Adc)
—
Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
—
DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc)
(IC = 12 A, VCE = 5.0 Vdc)
hFE
—
4.0
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 µH)
tds
—
Output Capacitance
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
—
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)
fT
—
SWITCHING CHARACTERISTICS
Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection
Simulator Circuit Table 2
Storage
Fall Time
tsv
—
tfi
—
(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Typ
Max
—
250
—
25
—
25
11
—
—
—
0.17
1.0
0.14
0.5
0.9
1.5
24
—
6.0
—
350
—
300
500
0.8
—
2000
175
3000
250
Unit
µAdc
µAdc
Vdc
Vdc
Vdc
Vdc
—
ns
pF
MHz
ns
100
10
1.0
0.1
0.01
1.0
SAFE OPERATING AREA
10 ms
50 ms
100 ms
250 ms
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 1. Maximum Forward Bias
Safe Operating Area
18
IC/IB = 5
14
TJ ≤ 100°C
10
6
2
0
300
600
900
1200 1500
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 2. Maximum Reverse Bias
Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data