PZTA14 Просмотр технического описания (PDF) - Philips Electronics
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PZTA14 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistor
Product specification
PZTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Pre-amplifiers requiring high input impedance.
PINNING
PIN
1
2, 4
3
DESCRIPTION
base/input
collector/output
emitter/ground
DESCRIPTION
handbook, halfpage
4
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
1
2
3
Top view
1
2, 4
TR1
TR2
MAM319
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
30
10
500
800
200
1.25
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14
2
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