01402F
DatasheetManufacturer
Part Name
Description
View
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
1
Share Link: 