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NE4X2WH6-A

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PANDUCT ® Type G — Wide Slot Wiring Duct
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Match & Start : NE4X2WH6-A
NEC
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
CEL
California Eastern Laboratories.
C BAND SUPER LOW NOISE HJ FET
CEL
California Eastern Laboratories.
SUPER LOW NOISE HJ FET
CEL
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
CEL
California Eastern Laboratories.
SUPER LOW NOISE HJ FET
NEC
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
CEL
California Eastern Laboratories.
NPN MEDIUM POWER MICROWAVE TRANSISTOR
Renesas
Renesas Electronics
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
CEL
California Eastern Laboratories.
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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