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NE4X4WH6-A

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PANDUCT ® Type G — Wide Slot Wiring Duct
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Match & Start : NE4X4WH6-A
CEL
California Eastern Laboratories.
SUPER LOW NOISE HJ FET
CEL
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC
NEC => Renesas Technology
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC
NEC => Renesas Technology
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
CEL
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
CEL
California Eastern Laboratories.
SUPER LOW NOISE HJ FET
NEC
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
CEL
California Eastern Laboratories.
NPN MEDIUM POWER MICROWAVE TRANSISTOR
CEL
California Eastern Laboratories.
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Renesas
Renesas Electronics
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
1 2 3 4 5
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