PTFB213004FV2R250
DatasheetManufacturer
Part Name
Description
View
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Match & Start : PTFB213004FV2R250
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
1
2
Share Link: 