PXAC243502FV-V1-R250
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Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Match & Start : PXAC243502FV-V1-R250
Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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