RJK03N9DNS
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Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Match & Start : RJK03N9DNS
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 45A, 3.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 50A, 2.3m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 50A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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