BSP51(2001) 查看數據表（PDF） - Infineon Technologies
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BSP51 Datasheet PDF : 5 Pages
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BSP50 ... BSP52
Electrical Characteristics at TA = 25°C, unless othertwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BSP50
45
-
BSP51
60
-
BSP52
80
-
V
-
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IE = 0
BSP50
60
-
-
BSP51
80
-
-
BSP52
90
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-emitter cutoff current
VCE = VCEOmax, VBE = 0
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
V(BR)EBO 5
-
ICES
-
-
IEBO
-
-
hFE
1000 -
2000 -
VCEsat
-
-
-
-
VBEsat
-
-
-
-
-
10 µA
10
-
-
-
V
1.3
1.8
1.9
2.2
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Turn-on time
IC = 500 mA, IB1 = IB2 = 0.5mA
Turn-off time
IC = 500 mA, IB1 = IB2 = 0.5mA
1) Pulse test: t ≤ 300µs, D = 2%
fT
- 200 - MHz
t(on)
- 400 - ns
t(off)
- 1500 -
2
Nov-30-2001
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