SI3443DV 查看數據表（PDF） - Fairchild Semiconductor
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SI3443DV Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
5
ID = -4A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
1250
1000
750
500
250
0
0
f = 1 MHz
VGS = 0 V
CISS
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
10 RDS(ON) LIMIT
1
VGS= -4.5V
SINGLE PULSE
0.1
RθJA= 156oC/W
TA= 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
5
SINGLE PULSE
RθJA = 156oC/W
4
TA = 25oC
3
2
1
0
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
Si3443DV, REV A
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