BCX5316 查看數據表（PDF） - Zetex => Diodes
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BCX5316 Datasheet PDF : 1 Pages
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
BCX5316
C
COMPLIMENTARY TYPE – BCX5616
PARTMARKING DETAIL – AL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1.5
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V(BR)CBO -100
V
IC =-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -80
V
IC =-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE =-10µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1 µA
-20 µA
-10 µA
-0.5 V
VCB =-30V
VCB =-30V, Tamb =150°C
VEB =-4V
IC =-500mA, IB =-50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0 V
IC =-500mA, VCE =-2V*
Static Forward Current hFE
25
Transfer Ratio
100
25
Transition Frequency
fT
150
IC =-5mA, VCE =-2V*
250
IC =-150mA, VCE =-2V*
IC =-500mA, VCE =-2V*
MHz IC =-50mA, VCE =-10V,
f=100MHz
Output Capacitance
Cobo
*Measured under pulsed conditions.
25
pF
VCB =-10V, f=1MHz
TBA
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