PF08103B 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

PF08103B

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Hitachi -> Renesas Electronics 

PF08103B

Package Dimensions

87 G 65

1.8 ± 0.2

Unit: mm

G

G

(1.40)

12 G 34

(Upper side)

13.75 ± 0.3

13.75 ± 0.3

(5.40)

(5.40)

(3.30) (3.30)

(1.60)(1.60) (3.40) (1.60)(1.60)

(1.40)

8 7G65

G

G

1 2 G34

Pin arrangement

1 : VCTL

2 : VCTL

3 : Vdd2

4 : Pout GSM

5 : Pout DCS

6 : Vdd1

7 : Vapc

8 : Pin

G : GND

(3.70) (3.70)

(2.50) (2.50)

(Bottom side)

Remark:

Coplanarity of bottom side of terminals

are less than 0 ± 0.1mm.

Hitachi Code

JEDEC

EIAJ

Weight (reference value)

RF-O







6

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