M74HCT132(1998) 查看數據表（PDF） - STMicroelectronics

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M74HCT132
(Rev.:1998)

QUAD 2-INPUT SCHMITT NAND GATE

STMicroelectronics 

74HCT132

DC SPECIFICATIONS

Symbol

Parameter

Vt+ High Level Threshold

Voltage

Vt- Low Level Threshold

Voltage

Vh Hysteresis Voltage

VOH High Level Output

Voltage

VOL Low Level Output

Voltage

II Input Leakage Current

ICC Quiescent Supply

Current

(*) All outputs loaded.

Test Conditions

VCC

(V)

4.5

5.5

4.5

5.5

4.5

5.5

4.5

VI(*) = IO=-50 µA

4.5

VIL or IO=-8 mA

VIH

4.5

VI(*) = IO=50 µA

4.5

VIH

IO=8 mA

5.5

VI = 5.5V or GND

5.5

VI = VCC or GND

Value

TA = 25 oC

Min. Typ . Max.

1.2 1.55 1.9

1.4 1.75 2.1

0.5 0.85 1.2

0.6 1.1 1.4

0.4 0.7 1.4

0.4 0.7 1.5

4.4 4.5

4.18 4.31

-40 to 85 oC

Min. Max.

1.2 1.9

1.4 2.1

0.5 1.2

0.6 1.4

0.4 1.4

0.4 1.5

4.4

4.13

0.0 0.1

0.17 0.26

±0.1

1

0.1

0.33

±1.0

10

Unit

V

V

V

V

V

µA

µA

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf =6 ns)

Symbol

Parameter

tTLH Output Transition Time

tTHL

tPLH Propagation Delay

tPHL Time

(*) Voltage range is 3.3V ± 0.3V

(**) Voltage range is 5V ± 0.5V

Test Condition

VCC

(V)

4.5

4.5

Value

TA = 25 oC

Min. Typ . Max.

7.0 15.0

-40 to 85 oC

Min. Max.

19.0

Unit

ns

20.0 33.0

41.0 ns

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Test Conditions

Value

Unit

TA = 25 oC

-40 to 85 oC

Min. Typ . Max. Min. Max.

CIN Input Capacitance

3.5

pF

CPD Power Dissipation

Capacitance (note 1)

20

pF

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to

Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)

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