Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
ALD1106SB 查看數據表(PDF) - Advanced Linear Devices
零件编号
产品描述 (功能)
生产厂家
ALD1106SB
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
Advanced Linear Devices
ALD1106SB Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
20
V
BS
= 0V
T
A
= 25
°
C
15
10
V
GS
= 12V
10V
8V
6V
5
0
0
2
4
4V
2V
6
8
10
12
DRAIN SOURCE VOLTAGE (V)
1000
500
0
-500
LOW VOLTAGE OUTPUT
CHARACTERISTICS
V
BS
= 0V
V
GS
= 12V
T
A
= 25
°
C
6V
4V
2V
-1000
-160
-80
0
80
160
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
20
10
V
BS
= 0V
f = 1KHz
5
T
A
= +125
°
C
2
T
A
= +25
°
C
I
DS
= 10mA
1
0.5
0.2
0
I
DS
= 1mA
2
4
6
8
10
12
DRAIN SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
20
V
GS
= V
DS
T
A
= 25
°
C
15
V
BS
= 0V -2V -4V
10
-6V
-8V
-10V
5
-12V
0
0
0.8
1.6
2.4
3.2
4.0
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
100
V
DS
= 0.2V
V
BS
= 0V
10
T
A
= +125
°
C
1
T
A
= +25
°
C
0.1
0
2
4
6
8
10
12
GATE SOURCE VOLTAGE (V)
1000
100
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
V
DS
= +12V
V
GS
= V
BS
= 0V
10
1
-50 -25
0 +25 +50 +75 +100 +125
AMBIENT TEMPERATURE (
°
C)
ALD1106/ALD1116
Advanced Linear Devices
3 of 11
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]