ALD1107(1998) 查看數據表（PDF） - Advanced Linear Devices

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ALD1107
(Rev.:1998)

QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISITCS

OUTPUT CHARACTERISTICS

-10

VBS = 0V

TA = 25°C

-7.5

VGS = -12V

-10V

-5.0

-8V

-2.5

0

0

-6V

-4V

-2V

-2

-4

-6

-8

-10 -12

DRAIN SOURCE VOLTAGE (V)

LOW VOLTAGE OUTPUT

CHARACTERISTICS

500

VBS = 0V

VGS = -12V

TA = 25°C

250

-6V

-4V

0

-2V

-250

-500

-320

-160

0

160

320

DRAIN SOURCE VOLTAGE (mV)

FORWARD TRANSCONDUCTANCE

vs. DRAIN SOURCE VOLTAGE

1.0

VBS = 0V

0.5 f = 1KHz

IDS = -5mA

0.2

0.1

0.05

0.02

TA = +25°C

IDS = -1mA

TA = +125°C

0.01

0

-2

-4

-6

-8

-10 -12

DRAIN SOURCE VOLTAGE (V)

TRANSFER CHARACTERISTIC

WITH SUBSTRATE BIAS

-20

VBS = 0V

-15

2V

4V

6V

8V

10V

12V

-10

-5

0

0

VGS = VDS

TA = 25°C

-0.8

-1.6

-2.4

-3.2

-4.0

GATE SOURCE VOLTAGE (V)

DRAIN SOURCE ON RESISTANCE

RDS (ON) vs. GATE SOURCE VOLTAGE

100

VDS = 0.4V

VBS = 0V

10

TA = +125°C

1000

100

OFF DRAIN CURRENT vs.

AMBIENT TEMPERATURE

VDS = -12V

VGS = VBS = 0V

1

10

TA = +25°C

0.1

0

-2

-4

-6

-8

-10 -12

ALD1107/ALD1117

GATE SOURCE VOLTAGE (V)

Advanced Linear Devices

1

-50 -25

0 +25 +50 +75 +100 +125

AMBIENT TEMPERATURE (°C)

3

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