T405Q-600H-TR 查看數據表（PDF） - STMicroelectronics
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T405Q-600H-TR Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
T405Q-600
Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
IT(rms)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VDSM,
VRSM
On-state rms current (full sine wave) IPAK, DPAK
Non repetitive surge peak on-state current (full cycle,
Tj initial = 25 °C)
I²t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Non repetitive surge peak off-state voltage
Tc = 110 °C
4
A
tp = 20 ms
35
A
tp = 16.7 ms
38
tp = 10 ms
6
A²s
F = 100 Hz
50
A/µs
Tj = 125 °C
4
A
Tj = 125 °C
0.5
W
- 40 to + 150
°C
- 40 to + 125
tp = 10 ms
700
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
Unit
T405Q
IGT(1) VD = 12 V, RL = 30 Ω
I - II - III
IV
5
Max.
mA
10
VGT
VGD
IH (2)
VD = 12 V, RL = 30 Ω
VD = VDRM, RL = 3.3 k Ω , Tj = 125 °C
IT = 100 mA
IL
IG = 1.2 IGT
dV/dt (2) VD = 67% VDRM, gate open
(dI/dt)c (2) (dV/dt)c = 2 V/µs
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1
All
Max. 1.3
V
All
Min. 0.2
V
Max. 10
mA
I - III - IV
II
Max. 10
mA
Max. 15
Tj = 125 °C
Min.
10
V/µs
Tj = 125 °C
Min.
1.8
A/ms
2/12
DocID10368 Rev 4
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