NTE2566 查看數據表（PDF） - NTE Electronics

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NTE2566

Silicon Complementary Transistors High Current, High Speed Switch

NTE Electronics 

NTE2566 (NPN) & NTE2567 (PNP)

Silicon Complementary Transistors

High Current, High Speed Switch

Features:

D Low Saturation Voltage

D Fast Switching Speed

D Isolated TO220 Type Package

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Collector Power Dissipation, PC

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Collector–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

ICBO

IEBO

hFE

fT

VCE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCB = 40V, IE = 0

VEB = 4V, IC = 0

VCE = 2V, IC = 1A

VCE = 2V, IC = 5A

VCE = 5V, IC = 1A

IC = 6A, IB = 0.6A

IC = 1mA, IE = 0

IC = 1mA, RBE = ∞

IE = 1mA, IC = 0

Min Typ Max Unit

– – 0.1 mA

–

0.1 mA

100 – 200

30 – –

– 10 – MHz

– – 0.4 V

60 – – V

50 – – V

6––V

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