BF901R 查看數據表（PDF） - Philips Electronics

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BF901R

Silicon n-channel dual gate MOS-FETs

Philips Electronics 

Philips Semiconductors

Silicon n-channel dual gate MOS-FETs

Product specification

BF901; BF901R

FEATURES

• Intended for low voltage operation

• Short channel transistor with high

ratio  Yfs :Cis

• Low noise gain-controlled amplifier

to 1 GHz

• BF901R has reverse pinning.

DESCRIPTION

Enhancement type field-effect

transistors in plastic microminiature

SOT143 and SOT143R envelopes,

with source and substrate

interconnected. They are intended for

UHF and VHF applications, such as

television tuners and professional

communications equipment

especially suited for low voltage

operation. These MOS-FET tetrodes

are protected against excessive input

voltage surges by integrated

back-to-back diodes between gates

and source.

PINNING

PIN

DESCRIPTION

1 source

2 drain

3 gate 2

4 gate 1

QUICK REFERENCE DATA

SYMBOL

VDS

ID

Ptot

Tj

 Yfs 

Cig1-s

Crs

F

PARAMETER

drain-source voltage

drain current

total power dissipation

junction temperature

transfer admittance

input capacitance at gate 1

feedback capacitance

noise figure at 800 MHz

TYP.

−

−

−

−

28

2.35

25

1.7

MAX.

12

30

200

150

35

2.75

−

−

UNIT

V

mA

mW

°C

mS

pF

fF

dB

handbook, halfpage

4

3

d

g2

g1

1

2

s,b

Top view

MAM039

Marking code: MO1.

Fig.1 Simplified outline (SOT143) and symbol.

handbook, halfpag3e

4

d

g2

g1

2

1

Top view

s,b

MAM040

Marking code: MO2.

Fig.2 Simplified outline (SOT143R) and symbol.

November 1992

2

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