BF901R 查看數據表（PDF） - Philips Electronics
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BF901R Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon n-channel dual gate MOS-FETs
Product specification
BF901; BF901R
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDS
VD-G2
ID
±IG1-S
±IG2-S
Ptot
Tstg
Tj
drain-source voltage
drain-gate 2 voltage
DC drain current
gate 1-source current
gate 2-source current
total power dissipation
BF901
BF901R
storage temperature
junction temperature
CONDITIONS
up to Tamb = 50 °C (note 1)
up to Tamb = 40 °C (note 1)
MIN. MAX. UNIT
−
12
V
−
6
V
−
30
mA
−
10
mA
−
10
mA
−
200 mW
−
200 mW
−65 150 °C
−
150 °C
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient (note 1)
BF901
BF901R
Note
1. Device mounted on an FR4 printboard.
THERMAL RESISTANCE
500 K/W
550 K/W
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P tot
(mW)
120
BF901R BF901
MBB756
0
0
50
100
150
200
Tamb (°C)
Fig.3 Power derating curve.
November 1992
3
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