2N6388(1999) 查看數據表（PDF） - STMicroelectronics
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2N6388 Datasheet PDF : 4 Pages
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2N6388
SILICON NPN POWER DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN DARLINGTON
s HIGH CURRENT CAPABILITY
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEV
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IB = 0)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (RBE ≤ 100Ω)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
April 1999
R1 Typ. = 10 KΩ
R2 Typ. = 160 Ω
Value
80
80
80
80
5
10
15
0.25
65
-65 to 150
150
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4
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