NTE278 查看數據表（PDF） - NTE Electronics

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NTE278

Silicon NPN Transistor Broadband RF Amp

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

hFE IC = 360mA, VCE = 5V

5

–

–

Dynamic Characteristics

IC = 50mA, VCE = 15V

40 – 120

Current–Gain Bandwidth Product

Collector–Base Capacitance

fT

IC = 50mA, VCE = 15V, f = 200MHz

Ccb VCB = 15V, IE = 0, f = 1MHz

1200 –

– 1.8

– MHz

3.5 pF

Noise Figure

NF IC = 10mA, VCE = 15V, f = 200MHz

–

3

– dB

Functional Test

Common–Emitter Amplifier Voltage

Gve IC = 50mA, VCC = 15V, f = 50 to 216MHz 11

–

Gain

– dB

Power Input

Pin IC = 50mA, VCC = 15V, RS = 50Ω,

Pout = 1.26mW, f = 200MHz

–

– 0.1 mW

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)

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