HI1-0546-2(1999) 查看數據表（PDF） - Intersil

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HI1-0546-2
(Rev.:1999)

Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection

Intersil 

Die Characteristics

DIE DIMENSIONS:

83.9 mils x 159 mils

METALLIZATION:

Type: CuAl

Thickness: 16kÅ ±2kÅ

SUBSTRATE POTENTIAL (NOTE):

-VSUPPLY

HI-546, HI-547, HI-548, HI-549

PASSIVATION:

Type: Nitride Over Silox

Nitride Thickness: 3.5kÅ ±1kÅ

Silox Thickness: 12kÅ ±2kÅ

WORST CASE CURRENT DENSITY:

1.4 x 105 A/cm2

TRANSISTOR COUNT:

485

PROCESS:

CMOS-DI

NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a

conductor at -VSUPPLY potential.

Metallization Mask Layouts

HI-546

EN

A0

A1 A2

A3 VREF

(18)

(17)

(16) (15) (14) (13)

GND

(12)

HI-547

EN

A0

A1 A2

NC VREF

(18)

(17)

(16) (15) (14) (13)

GND

(12)

IN 1

(19)

IN 2

(20)

IN 3

(21)

IN 4

(22)

IN 5

(23)

IN 6

(24)

IN 7

(25)

IN 8

(26)

V- (27)

OUT (28)

+V (1)

IN 9

(11)

IN 10

(10)

IN 11

(9)

IN 12

(8)

IN 13

(7)

IN 14

(6)

IN 15

(5)

IN 16

(4)

NC (2)

IN 1A

(19)

IN 2A

(20)

IN 3A

(21)

IN 4A

(22)

IN 5A

(23)

IN 6A

(24)

IN 7A

(25)

IN 8A

(26)

V- (27)

OUT A (28)

+V (1)

IN 1B

(11)

IN 2B

(10)

IN 3B

(9)

IN 4B

(8)

IN 5B

(7)

IN 6B

(6)

IN 7B

(5)

IN 8B

(4)

OUT B(2)

14

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