2N6987U 查看數據表（PDF） - Optek Technology
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2N6987U Datasheet PDF : 4 Pages
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Surface Mount Quad PNP
Transistor
2N6987U (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Collector‐Emi er Voltage
Collector‐Base Voltage
Emi er‐Base Voltage
Collector Current‐Con nuous
Opera ng and Storage (TJ , Tstg)
Power Dissipa on (single transistor, no heat sink)
Power Dissipa on (total device)
Isola on Voltage
60 V
60 V
5V
600 mA
‐65° C to +200 °C
0.5 W
1 W(1)
500 V
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX
OFF CHARACTERISTICS
V(BR)CBO Collector‐Base Breakdown Voltage
60
V(BR)CEO Collector‐Emi er Breakdown Voltage
60
V(BR)EBO Emi er‐Base Breakdown Voltage
5
ICBO2 Collector‐Base Cutoff Current
10
ICBO3 Emi er‐Base Cutoff Current
10
IEBO Emi er‐Base Cutoff Current
50
ON CHARACTERISTICS
hFE 1 Forward‐Current Transfer Ra o
75
hFE 2 Forward‐Current Transfer Ra o
100 450
hFE 3 Forward‐Current Transfer Ra o
100
hFE 4 Forward‐Current Transfer Ra o
100 300
hFE 5 Forward‐Current Transfer Ra o
50
hFE 6 Forward‐Current Transfer Ra o
50
UNITS
TEST CONDITIONS
V IC = 10 µA
V
IC = 10 µA(2)
V IE = 10 µA
nA VCB = 50 V
µA VEB = 50 V, TA = 150° C
nA VEB = 4 V
‐ VCE = 10 V, IC = 0.1 mA
‐ VCE = 10 V, IC = 1.0 mA
‐
VCE = 10 V, IC = 10 mA(2)
‐
VCE = 10 V, IC = 150 mA(2)
‐
VCE = 10 V, IC = 500 mA(2)
‐
VCE = 10 V, IC = 1 mA, TA = ‐55° C(2)
Note:
1. Derate linearly 8.57 mW/°C above TA = 25°C
2. Pulse Width = 300 µs ±50, 1‐2% Duty Cycle
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 2
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