F1S70N03 查看數據表（PDF） - Fairchild Semiconductor
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F1S70N03 Datasheet PDF : 8 Pages
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RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves (Continued)
200
VGS = 10V
160
120
VGS = 8V
VGS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
80
VGS = 5V
40
VGS = 4V
0
0
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 70A
1.5
1.0
0.5
0
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
ID = 250µA
1.6
1.2
0.8
0.4
0
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160 VDD = 15V
120
80
-55oC
25oC
175oC
40
0
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
VGS = VDS, ID = 250µA
1.6
1.2
0.8
0.4
0
-80 -40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
7000
6000
5000
4000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
3000
2000
1000
COSS
CRSS
0
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RFP70N03, RF1S70N03, RF1S70N03SM Rev. C
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