L9380(1998) 查看數據表（PDF） - STMicroelectronics
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L9380 Datasheet PDF : 12 Pages
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L9380
ELECTRICAL CHARACTERISTICS (7V ≤ VS ≤ 18.5V; -40°C ≤ TJ ≤ 150°C, unless otherwise specified.)
Symbol
Parameter
SUPPLY
IVS
Static Operating Supply Current
CHARGE PUMP
VCP
Charge Pump Voltage Above VS
tCP
Charging Time
VSCP off Overvoltage Shut down
VSCP hys
fCP
Overvoltage Shut down
Hysteresis 1)
Charge Pump frequency 1)
GATE DRIVERS
IGSo
Gate Source Current
IGSi
Gate Sink Current
DRAIN - SOURCE SENSING
VPR
Bias Current Programming
voltage
ID Leak
Drain pin leakage current
ID
Drain pin bias current
ISmax
Source pin input current
VHYST
Comparator Hysteresis
TIMER
VTHi
Timer threshold high
VTLo
Timer threshold low
IT
Timer Current
INPUTS
VLOW
VHIGH
VINhys
IIN
IEN
td
Input Enable low voltage
Input Enable high voltage
Input Enable Hysteresis(1)
Input source current
Enable sink current
Transfer time IN/ENABLE
Test Condition
VS = 14V
VCP = VS + 8V CCP = 100pF
VG = VS
VG ≥ 0.8V
10µA ≤ IPR ≤ 100µA; VD ≥ 4V
VS = 0V; VD =14V
VS ≥ VD + 1V; VD ≥ 5V
VS ≥ VD + 1V; VD ≥ 7V
IN = 5V; VT = 2V
IN = 0V; VS < VD;
VD ≥ 5V; VT = 2V
VIN ≤ 3V
VEN ≥ 1V
VS = 14V VG = VS; OPEN GATE
Min.
8
20
50
100
-5
1
1.8
0
0.9 IPR
10
4
0.3
0.4 IPR
-0.6 IPR
-0.3
3
50
-30
5
Typ.
200
250
-3
3
2
20
4.4
0.4
200
Max.
2.5
17
200
30
1000
400
-1
5
2.2
5
1.1 IPR
60
4.8
0.5
0.6 IPR
-0.4 IPR
1
7
500
-5
30
2.5
Unit
mA
V
µs
V
mV
KHz
mA
mA
V
µA
µA
mV
V
V
V
V
mV
µA
µA
µs
NOTE: Not measured guaranteed by design
Function is given for supply voltage down to 5.5V. Function means: The channels are controlled from the
inputs, some other parameters may exceed the limit. In this case the programming voltage and timer
threshold will be lower. This leads to a lower protection threshold and time.
FUNCTIONAL DESCRIPTION
The Triple High-Side Power-MOS Driver features
all necessary control and protection functions to
switch on three Power-MOS transistors operating
as High-Side switches in automotive electronic
control units. The key application field is relays re-
placement in systems where high current loads,
usually motors with nominal currents of about 40A
connected to ground, has to be switched.
A high signal at the EN pin enables all three
channels. With enable low gates are clamped to
ground. In this condition the gate sink current is
higher than the specified 3mA. An enable low sig-
4/12
nal makes also a reset of the timer.
A low signal at the inputs switch on the gates of
the external MOS. A short circuit at the input
leads to permanent activation of the concerned
channel. In this case the device can be disabled
with the enable pin. The charge pump loading is
not influenced due to the enable input.
An external N-channel MOS driver in high side
configuration needs a gate driving voltage higher
than VS. It is generated by means of a charge
pump with integrated charge transfer capacitors
and one external charge storage capacitor CCP.
The charge pump is dimensioned to load a ca-
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