L9380(1998) 查看數據表（PDF） - STMicroelectronics

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L9380
(Rev.:1998)

TRIPLE HIGH-SIDE MOSFET DRIVER

STMicroelectronics 

Figure 13. Measured Circuit.

The EMS of the device was verified in the below described setup.

L9380

3.125Hz 9

f

2

8

6.25Hz

f

2

7

12.5Hz

f

2

6

25Hz

3 4 5 10 1 2

U(t)

+

CAR-BATTERY

VBAT 1 BNC

2m

STRIPLINE

VS 2 BNC SMB7W01-200

SMT_39A

100nF

VS

33µF

T1

10nF

IN1 6

1KΩ

2.2nF

5.6V

IN1

4.7nF

T2

10nF

IN2 7

1KΩ

2.2nF

5.6V

IN2

4.7nF

IN3 8

1KΩ

IN3

2.2nF

5.6V

EN 9

1KΩ

4.7nF

EN

2.2nF

5.6V

10

4.7nF

PC-BOARD IN RF BOX

VSI

-

VSI

≥1

+

CHARGE PUMP

OVERVOLTAGE

IPR

CP

≥1

ENN

DRIVER 1

VSI

-

VSI

≥1

+

IPR

CP

≥1

ENN

DRIVER 2

VSI

ENN

DRIVER 3

CP

≥1

ENN

VS

REG.

REFERENCE

VSI

2V

IPR

ANECHOIC CHAMBER

CP

GND

33nF

D1 2KΩ

STD17N06 33V 5Ω

G1

10KΩ

18V

S1 2KΩ

10KΩ OUT1

3

1KΩ

2.2nF

D2 2KΩ

STD17N06 33V 5Ω

G2

10KΩ

18V

S2

10KΩ OUT2

2KΩ

1KΩ

4

2.2nF

STD17N06 33V

G3

10KΩ

18V

20KΩ

PR

B60N06

10KΩ

5

1KΩ

OUT3

2.2nF

D98AT401

9/12

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