USB6B2RL 查看數據表（PDF） - STMicroelectronics

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USB6B2RL

DATA LINES PROTECTION

STMicroelectronics 

USB6Bx

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

VPP

PPP

IPP

Tstg

Tj

TL

Parameter

Value

Peak pulse voltage

IEC1000-4-2 contact discharge

8

IEC1000-4-2 air discharge

15

MIL STD883C-Method 3015-6

4

Peak pulse power

8/20 µs

500

Peak pulse current

8/20 µs

25

Storage temperature range

Maximum junction temperature

- 55 to + 150

+ 150

Lead solder temperature (10s duration)

260

Unit

kV

W

A

°C

°C

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

VBR

IRM

C

Parameter

Value

min. typ. max.

Breakdown voltage between Vbus and

GND

IR=1mA

6

Leakage current

VRM=5.25V

10

Capacitance between pins D+ and D-

VCC

15

VOSC =30mV, F=1MHz, VR=0V

not connected

Capacitance between pins D+ (or D-) and GND VCC=5V

25

VOSC =30mV, F=1MHz, VR=5V

Unit

V

µA

pF

pF

6/9

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