1M0680 查看數據表（PDF） - Fairchild Semiconductor
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1M0680 Datasheet PDF : 8 Pages
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KA1M0680
ABSOLUTE MAXIMUM RATINGS
Characteristic
Drain-source (GND) voltage (1)
Drain-Gate voltage (RGS=1MΩ)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Supply voltage
Analog input voltage range
Total power dissipation
Symbol
VDSS
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC
VFB
PD (watt H/S)
Derating
Operating temperature
Storage temperature
TOPR
TSTG
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C
Value
800
800
±30
24.0
455
−
6.0
4.0
30
−0.3 to VSD
150
1.21
−25 to +85
−55 to +150
SPS
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C
2
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