SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4663
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2.5A; IB=0.5A
At rated volatge
At rated volatge
hFE-1
DC current gain
IC=2.5A ; VCE=2V
hFE-2
fT
ton
ts
tf
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
IC=1mA ; VCE=2V
IC=0.5A ; VCE=10V
IC=2.5A;IB1=0.5A
IB2=1A ,RL=60B
VBB2=4V
MIN TYP. MAX UNIT
200
V
1.0
V
1.5
V
0.1
mA
0.1
mA
10
25
10
13
MHz
0.3
µs
1.0
µs
0.1
µs
2