TK10A60D(STA4,Q,M) 查看數據表（PDF） - Toshiba
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TK10A60D(STA4,Q,M)
Toshiba
TK10A60D(STA4,Q,M) Datasheet PDF : 6 Pages
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TK10A60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
⎯
⎯
±1
μA
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
600 ⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 5 A
⎯ 0.62 0.75 Ω
⎪Yfs⎪
VDS = 10 V, ID = 5 A
1.5 6.0
⎯
S
Ciss
⎯ 1350 ⎯
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
6
⎯
pF
Coss
⎯ 135 ⎯
tr
10 V
VGS
ID = 5 A VOUT
⎯
22
⎯
0V
ton
50 Ω
RL =
40 Ω
⎯
55
⎯
ns
tf
⎯
15
⎯
VDD ∼− 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯ 100 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
⎯
25
⎯
⎯
16
⎯
nC
⎯
9
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
10
A
⎯
⎯
40
A
⎯
⎯
−1.7
V
⎯ 1300 ⎯
ns
⎯
12
⎯
μC
Marking
K10A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Lot No.
Note 4
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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