2N7002L(2016) 查看數據表（PDF） - ON Semiconductor
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2N7002L Datasheet PDF : 4 Pages
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2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
V(BR)DSS
60
TJ = 25°C
IDSS
−
TJ = 125°C
−
Gate−Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate−Body Leakage Current, Reverse
(VGS = − 20 Vdc)
ON CHARACTERISTICS (Note 5)
IGSSF
−
IGSSR
−
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
On−State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain−Source On−State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain−Source On−State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
VGS(th)
1.0
ID(on)
500
VDS(on)
−
−
rDS(on)
TC = 25°C
−
TC = 125°C
−
TC = 25°C
−
TC = 125°C
−
gFS
80
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Ciss
−
Coss
−
Crss
−
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID ^ 500 mAdc,
td(on)
−
RG = 25 W, RL = 50 W, Vgen = 10 V)
td(off)
−
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
VSD
−
IS
−
Source Current Pulsed
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ISM
−
Typ
Max
Unit
−
−
Vdc
−
1.0
mAdc
−
500
−
100
nAdc
−
−100
nAdc
−
2.5
Vdc
−
−
mA
Vdc
−
3.75
−
0.375
Ohms
−
7.5
−
13.5
−
7.5
−
13.5
−
−
mS
−
50
pF
−
25
pF
−
5.0
pF
−
20
ns
−
40
ns
−
−1.5
Vdc
−
−115
mAdc
−
− 800
mAdc
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