DTC114E 查看數據表（PDF） - ON Semiconductor

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DTC114E

Bias Resistor Transistor

ON Semiconductor 

DTC114E SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0)

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)

Emitter–Base Cutoff Current

(VEB = 6.0 V, IC = 0)

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

ICBO

—

ICEO

—

IEBO

—

—

—

—

—

—

—

—

—

—

—

100

nAdc

—

500

nAdc

—

0.5

mAdc

—

0.2

—

0.1

—

0.2

—

0.9

—

1.9

—

4.3

—

2.3

—

1.5

—

0.18

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

50

—

—

Vdc

Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO

50

—

—

Vdc

ON CHARACTERISTICS (2.)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

hFE

35

60

—

60

100

—

80

140

—

80

140

—

160

350

—

160

350

—

3.0

5.0

—

8.0

15

—

15

30

—

80

200

—

Collector–Emitter Saturation Voltage

(IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y

(IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E

(IC = 10 mA, IB = 5 mA) DTC123E

(IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/

(IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

DTC114E

DTC124E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

DTC144E

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

VCE(sat)

—

VOL

—

—

—

—

—

—

—

—

—

—

—

0.25

Vdc

Vdc

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

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