FDD6N50TF(2006) 查看數據表（PDF） - Fairchild Semiconductor
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FDD6N50TF Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FDD6N50
FDD6N50
FDU6N50
Device
FDD6N50TM
FDD6N50TF
FDU6N50TU
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
--
VDS = 400V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 3A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 6A
RG = 25Ω
VDS = 400V, ID = 6A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 6A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Typ.
--
0.5
--
--
--
--
--
0.76
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
275
1.7
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
0.9
Ω
--
S
940 pF
190 pF
13.5 pF
20
ns
120 ns
60
ns
80
ns
16.6 nC
--
nC
--
nC
6
A
24
A
1.4
V
--
ns
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
FDD6N50/FDU6N50 REV. A
www.fairchildsemi.com
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