IS61SF25618-10B 查看數據表（PDF） - Integrated Silicon Solution

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IS61SF25618-10B

256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM

Integrated Silicon Solution 

IS61SF25616

IS61SF25618

CAPACITANCE(1,2)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

6

COUT

Input/Output Capacitance

VOUT = 0V

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.

Unit

pF

pF

ISSI ®

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

Unit

0V to 3.0V

1.5 ns

1.5V

See Figures 1 and 2

AC TEST LOADS

ZO = 50Ω

Output

Buffer

30 pF

Figure 1

50Ω

1.5V

3.3V

317 Ω

OUTPUT

5 pF

Including

jig and

scope

351 Ω

Figure 2

8

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

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