MC78T05ACT 查看數據表（PDF） - ON Semiconductor
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MC78T05ACT Datasheet PDF : 12 Pages
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MC78T00 Series
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Rating
Symbol
Value
Unit
Input Voltage (5.0 V − 12 V)
Input Voltage (15 V)
VI
35
Vdc
40
Power Dissipation and Thermal Characteristics
Plastic Package (Note 1)
TA = +25°C
Thermal Resistance, Junction−to−Air
TC = +25°C
Thermal Resistance, Junction−to−Case
PD
RqJA
PD
RqJC
Internally Limited
65
Internally Limited
2.5
°C/W
°C/W
Storage Junction Temperature
Operating Junction Temperature Range
(MC78T00C, AC)
Tstg
+150
°C
TJ
0 to +125
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W.
ELECTRICAL CHARACTERISTICS (Vin = 10 V, IO = 3.0 A, 0°C ≤ TJ ≤ 125°C, PO ≤ Pmax (Note 2), unless otherwise noted.)
MC78T05AC
MC78T05C
Characteristics
Symbol Min
Typ
Max
Min
Typ
Max
Unit
Output Voltage
(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)
(5.0 mA ≤ IO ≤ 3.0 A;
5.0 mA ≤ IO ≤ 2.0 A, 7.3 Vdc ≤ Vin ≤ 20 Vdc)
VO
Vdc
4.9
5.0
5.1
4.8
5.0
5.2
4.8
5.0
5.2
4.75
5.0
5.25
Line Regulation (Note 3)
Regline
−
3.0
25
−
3.0
25
mV
(7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C;
7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 1.0 A, TJ = +25°C;
8.0 Vdc ≤ Vin ≤ 12 Vdc, IO = 3.0 A, TJ = +25°C;
7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A)
Load Regulation (Note 3)
(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)
(5.0 mA ≤ IO ≤ 3.0 A)
Regload
mV
−
10
30
−
10
30
−
15
80
−
15
80
Thermal Regulation
(Pulse = 10 ms, P = 20 W, TA = +25°C)
Regtherm
−
0.001 0.01
−
0.002 0.03 %VO/W
Quiescent Current
(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)
(5.0 mA ≤ IO ≤ 3.0 A)
IB
mA
−
3.5
5.0
−
3.5
5.0
−
4.0
6.0
−
4.0
6.0
Quiescent Current Change
DIB
(7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C;
5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C;
7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A)
−
0.3
1.0
−
0.3
1.0
mA
Ripple Rejection
(8.0 Vdc ≤ Vin ≤ 18 Vdc, f = 120 Hz,
IO = 2.0 A, TJ = 25°C)
RR
62
75
−
62
75
−
dB
Dropout Voltage (IO = 3.0 A, TJ = +25°C)
Vin−VO
−
2.2
2.5
−
2.2
2.5
Vdc
Output Noise Voltage
(10 Hz ≤ f ≤ 100 kHz, TJ = +25°C)
Vn
−
10
−
−
10
−
mV/VO
Output Resistance (f = 1.0 kHz)
RO
−
2.0
−
−
20
−
mW
2. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W.
3. Line and load regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account
separately.
Pulse testing with low duty cycle is used.
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