MUN5111DW1T1 查看數據表（PDF） - ON Semiconductor

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MUN5111DW1T1

Dual Bias Resistor Transistors

ON Semiconductor 

MUN5111DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1

1

IC/IB = 10

0.1

0.01

−25°C

25°C

75°C

1000

100

10

0.001

1

0

5

10

15

20

25

30

1

IC, COLLECTOR CURRENT (mA)

Figure 32. VCE(sat) versus IC

VCE = 10 V

75°C

TA = −25°C

25°C

10

100

IC, COLLECTOR CURRENT (mA)

Figure 33. DC Current Gain

TBD

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 34. Output Capacitance

10

100

75°C

10

25°C

1

TA = −25°C

0.1

0.01

VO = 5 V

0.001

01

23 45 67 8

Vin, INPUT VOLTAGE (VOLTS)

9 10

Figure 35. Output Current versus Input Voltage

TA = −25°C

1 75°C

25°C

VO = 0.2 V

0.1

0

5

10

15

20

25

IC, COLLECTOR CURRENT (mA)

Figure 36. Input Voltage versus Output Current

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