RN4906(2007) 查看數據表（PDF） - Toshiba
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RN4906 Datasheet PDF : 5 Pages
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RN4906
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
Storage temperature range
PC *
Tj
Tstg
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Marking
Equivalent Circuit (Top View)
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VCE = −50V, IB = 0
― VEB = −5V, IC = 0
― VCE = −5V, IC = −10mA
― IC = −5mA, IB = −0.25mA
― VCE = −0.2V, IC = −5mA
― VCE = −5V, IC = −0.1mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0
Min Typ. Max Unit
―
― −100
nA
―
― −500
−0.074 ― −0.138 mA
80
―
―
―
― −0.1 −0.3 V
−0.7 ― −1.3 V
−0.5 ― −0.8 V
―
200
― MHz
―
3
6
pF
2
2007-11-01
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