SUB85N10-10 查看數據表（PDF） - Vishay Semiconductors
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SUB85N10-10 Datasheet PDF : 6 Pages
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SUP/SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
2.5
VGS = 10 V
ID = 30 A
2.0
TA = 25 °C, unless otherwise noted
100
1.5
TJ = 150 °C
TJ = 25 °C
10
1.0
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
1
0
0.3
0.6
0.9
1.2
VSD− Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
140
100
IAV (A) at T A = 25 °C
10
IAV (A) at T A = 150 °C
1
130
ID = 250 µA
120
110
100
0.1
0.00001 0.0001 0.001 0.01
0.1
1
tin (Sec)
Avalanche Current vs. Time
90
- 50 - 25 0
25 50 75 100 125 150 175
TJ − Junction Temperature (°C)
TJ - Drain-Source Breakdown
vs. Junction-Temperature
www.vishay.com
4
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
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