UN1066L-AB3-T(2015) 查看數據表（PDF） - Unisonic Technologies

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UN1066L-AB3-T
(Rev.:2015)

HIGH SPEED SWITCHING TRANSISTOR

Unisonic Technologies 

UN1066

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

BVCBO

20

V

Collector to Emitter Voltage

Emitter to Base Voltage

BVCEO

15

V

BVEBO

5

V

Collector Current

Collector Current (Pulse)

IC

6

A

ICP

9

A

Base Current

Collector Dissipation (TC=25°C)

IB

600

mA

PC

3.5

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

TEST CONDITIONS

BVCBO

BVCEO

IC=10μA, IE=0

IC=1mA, RBE=∞

BVEBO

VCE(SAT)

VBE(SAT)

IE=10μA, IC=0

IC=1.5A, IB=30mA

IC=3A, IB=60mA

IC=1.5A, IB=30mA

ICBO

IEBO

VCB=12V, IE=0

VEB=4V, IC=0

hFE VCE=0.5V, IC=5A

fT

VCE=2V, IC=500mA

Cob VCB=10V, f=1MHz

tON Refer to Test Circuit

tSTG Refer to Test Circuit

tF

Refer to Test Circuit

MIN TYP MAX UNIT

20

V

15

V

5

V

180 mV

300 mV

1.2

V

0.1 µA

0.1 µA

250

100

MHz

50

pF

50

ns

250 ns

25

ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R209-023.D

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